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UNISONIC TECHNOLOGIES CO., LTD UF630
9A, 200V, 0.4 , N-CHANNEL POWER MOSFETS
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
MOSFET
1 TO-220
FEATURES
* 9A, 200V, Low RDS(ON)(0.4) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance
1
TO-220F
*Pb-free plating product number: UF630L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number Normal Lead Free Plating UF630-TA3-T UF630L-TA3-T UF630-TF3-T UF630L-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube
UF630L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating Blank: Pb/Sn ,
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ABSOLUTE MAXIMUM RATINGS (Tc = 25 , Unless Otherwise Specified)
PARAMETER Drain to Source Voltage (TJ =25 ~125 ) Drain to Gate Voltage (RGS = 20k, TJ =25 ~125 ) Gate to Source Voltage Continuous Ta = 100 Drain Current SYMBOL VDS VDGR VGS ID RATINGS 200 200 20 9 6
MOSFET
UNIT V V V A A
Pulsed IDM 36 A Maximum Power Dissipation (Ta = 25 75 W PD Derating above 25 0.6 W/ Single Pulse Avalanche Energy Rating 150 mJ EAS (VDD=20V, starting TJ =25 , L=3.37mH, RG=50, peak IAS = 9A) Operation and Storage Temperature TJ, TSTG -40 ~ +150 Note: 1.Signified recommend operating range that indicates conditions for which the device is intended to be functional, but does not guarantee specific performance limits. 2.Absolute maximum ratings indicate limits beyond which damage to the device may occur.
ELECTRICAL SPECIFICATIONS (TC =25 , unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS Drain to Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V (Figure 16) Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250A On-State Drain Current (Note 1) ID(ON) VDS > ID(ON) x RDS(ON)MAX, VGS = 10V VDS = Rated BVDSS, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS=0.8xRated BVDSS,VGS=0V,TJ= 125 Gate to Source Leakage Current IGSS VGS = 20V Drain to Source On Resistance RDS(ON) ID = 5A, VGS = 10V (Figure 14, 15) (Note 1) VDS > ID(ON) x RDS(ON)MAX, ID = 5A Forward Transconductance (Note 1) gFS (Figure 18) Turn-On Delay Time tDLY(ON) VDD = 90V, ID9A, RGS = 9.1, VGS = 10V Rise Time tR Turn-Off Delay Time tDLY(OFF) RL = 9.6 (Note 2) Fall Time tF Total Gate Charge QG(TOT) VGS = 10V, ID = 9A, VDS = 0.8 x Rated BVDSS Gate to Source Charge QGS Ig(REF) = 1.5mA (Figure 20) (Note 3) Gate to Drain "Miller" Charge QGD Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance COSS (Figure 17) Reverse - Transfer Capacitance CRSS NOTE : 1. Pulse Test: Pulse width300s, Duty Cycle2%. 2. MOSFET Switching Times are Essentially Independent of Operating Temperature. 3. Gate Charge is Essentially Independent of Operating Temperature. MIN 200 2 9 TYP MAX UNIT V 4 V A 25 A 250 A 100 nA 0.25 3 4.8 30 50 50 40 30 0.85 S ns ns ns ns nC nC nC pF pF pF
19 10 9 600 250 80
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INTERNAL PACKAGE INDUCTANCE
PARAMETER SYMBOL MIN Internal Drain Inductance Measured from the contact screw on tab to center of die LD Measured from the drain lead(6mm from package) to center of die Internal Source Inductance LS Measured from the source lead(6mm from header) to source bond pad Remark: Modified MOSFET symbol showing the internal devices inductances as below.
D LD G LS S
MOSFET
TYP 3.5 4.5 7.5
MAX
UNIT nH nH nH
THERMAL DATA
PARAMETER Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case SYMBOL
JA Jc
RATINGS 80 1.67
UNIT /W
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN Source to Drain Diode Voltage TJ = 25 , ISD = 9.0A, VGS =0V (Figure 19) VSD (Note 1) Continuous Source to Drain Current ISD Note 2 Pulse Source to Drain Current ISDM TJ = 150 , ISD = 9.0A, dISD/dt = 100A/s Reverse Recovery Time tRR TJ = 150 , ISD = 9.0A, dISD/dt = 100A/s Reverse Recovery Charge QRR NOTE : 1. Pulse Test: Pulse width300s, Duty Cycle2%. 2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below. TYP MAX UNIT 2 8 36 450 3 V A A ns C
D
G
S
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TEST CIRCUITS AND WAVEFORMS
VDS
MOSFET
L VARY tp TO OBTAIN REQUIRED PEAK IAS VGS DUT tp
RG
+ VDD
0V
IAS 0.01
FIGURE 1. UNCLAMPED ENERGY TEST CIRCUIT
BVDSS tp IAS VDS VDD
0 tAV
FIGURE 2. UNCLAMPED ENERGY WAVEFORMS
RL + DUT
RG
VDD
VGS
FIGURE 3. SWITCHING TIME TEST CIRCUIT
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TEST CIRCUITS AND WAVEFORMS(cont.)
tON tDLY(ON) tR VDS 90% tOFF tDLY(OFF) tF 90%
MOSFET
0
10% 90%
10%
VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 4. RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR VDS (ISOLATED SUPPLY)
12V BATTERY
0.2
F
SAME TYPE AS DUT 50K 0.3 F
D DUT
G
IG (REF) 0 IG CURRENT SAMPLING RESISTOR
S VDS ID CURRENT SAMPLING RESISTOR
FIGURE 5. GATE CHARGE TEST CIRCUIT
VDD QG(TOT) QGD QGS VGS
VDS 0 IG(REF) 0
FIGURE 6. GATE CHARGE WAVEFORMS
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TYPICAL CHARACTERISTICS
FIGURE 7. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
MOSFET
FIGURE 8. MAXIMUM CONTIONUOUS DRAIN CURRENT vs CASE TEMPERATURE 10
POWER DISSIPATION MULTIPLIER
1.2
DRAIN CURRENT, I D (A)
150
1.0 0.8 0.6 0.4 0.2 0 0 50 100
8 6 4 2 0
25
50
75
100
125 )
150
CASE TEMPERATURE, TC ( )
CASE TEMPERATURE, TC (
FIGURE 9. NORMALIZED TRANSIENT THERMAL IMPEDANCE 100
FIGURE 10. FORWARD BIAS SAFE OPERATING AREA
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z JC
0.5 0.2 0.1 0.1 0.05
DRAIN CURRENT, I D (A)
1.0
10
10 s 100 s 1ms
PDM 0.02 0.01 t1 t2
1
Operation in This Area May be Limited by rDS (on) TC=25 TJ=Max Rated 1 10 100
0.01 -5 10
Single pulse Duty Factor, D=t1/t2 Peak TJ =PDMxZ JC R 10
-4
10ms 100ms DC
JC +T C
10
-3
10
-2
10
-1
1
10
0.1
1000
RECTANGULAR PULSE DURATION, t1 (s)
DRAIN TO SOURCE VOLTAGE, VDS (V)
FIGURE 11. OUTPUT CHARACTERISTICS 20
DRAIN CURRENT, ID (A)
FIGURE 12. SATURATION CHARACTERISTICS 10
DRAIN CURRENT, ID (A)
16 12 8
VGS =10V VGS=8V
Pulse Duration=80 s Duty Cycle = 0.5% Max VGS =7V VGS =6V
8 6 4 2 0
Pulse Duration=80 s Duty Cycle = 0.5% Max
VGS =10V VGS =9V VGS =8V VGS =7V VGS =6V VGS =5V
VGS=5V 4 VGS=4V 0 0 20 40 60 80 100
VGS=4V 0 1 2 3 4 5
DRAIN TO SOURCE VOLTAGE, VDS, (V)
DRAIN TO SOURCE VOLTAGE, VDS (V)
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TYPICAL CHARACTERISTICS (cont.)
FIGURE 13. TRANSFER CHARACTERISTICS
DRAIN TO SOURCE ON RESISTANCE, R DS (ON)
MOSFET
FIGURE 14. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 0.8 2 s Pulse Test VGS=10V 0.6
10
DRAIN CURRENT, I D (A)
Pulse Duration=80 s Duty Cycle = 0.5% Max 8 VDS>ID(ON)xRDS(ON)MAX
6 4 2 0 125 25 -40
0.4 VGS=20V 0.2
0
1
2
3
4
5
6
7
0
0
10
20
30
40
GATE TO SOURCE VOLTAGE , VGS (V)
DRAIN CURRENT, ID (A)
FIGURE 15. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
NORMALIZED DRAIN TO SOURCE ON RESISTANCE
FIGURE 16. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE
2.2
Pulse Duration =80 s Duty Cycle = 0.5% Max 1.8 VGS =10V, I D=5A 1.4 1 0.6 0.2
1.25 1.15 1.05 0.95 0.85
ID=250 A
-40
0
40
80
120
0.75 -40
0
40
80
120
160
JUNCTION TEMPERATURE, TJ ( )
JUNCTION TEMPERATURE, TJ ( )
FIGURE 17. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 2000
CAPACITANCE, C (pF)
FIGURE 18. TRANSCONDUCTANCE vs DRAIN CURRENT 10 Pulse Duration=80 s Duty Cycle = 0.5% Max 8 6 4 2 0 -40 25 125
1600 1200 800 400 0 CRSS 1 10 20
CISS COSS 30 30 50
TRANSCONDUCTANCE, gFS (S)
VGS = 0V, f = 1MHz CISS = CGS + C GD, CDS CRSS = CGD COSS = CDS + CGD
0
2
4
6
8
10
DRAIN TO SOURCE VOLTAGE, VDS (V)
DRAIN CURRENT, I D (A)
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TYPICAL CHARACTERISTICS (cont.)
FIGURE 19. SOURCE TO DRAIN DIODE VOLTAGE
SOURCE TO DRAIN CURRENT, ISD (A) GATE TO SOURCE VOLTAGE, VGS (V)
MOSFET
FIGURE 20. GATE TO SOURCE VOLTAGE vs GATE CHARGE 20 ID=9A VDS=40V VDS=100V 10 VDS=160V
Pulse Duration=80 s 100 Duty Cycle = 0.5% Max
15
10
150
25
5
1
0
1
2
3
4
0
0
8
16
24
32
40
SOURCE TO DRAIN VOLTAGE, VSD (V)
GATE CHARGE, QG (nC)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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